6H-SiC Schottky barrier diodes with nearly ideal breakdown voltage

Materials Science Forum

Volumn 338 (II, Issue , 2000, Pages 1219-1222

  Brezeanu, G ^a   Badila, M ^e   Millan, J ^b   Godignon, P ^b   Locatelli, M L ^c   Chante, J P ^c   Lebedev, A A ^d   Banu, V ^e  

^a UNIVERSITY POLITEHNICA OF BUCHAREST   (Romania)

^b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^c UNIVERSITÉ DE LYON   (France)

^d IOFFE INSTITUTE   (Russian Federation)

^e NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC RECTIFIERS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS;

OXIDE RAMP PROFILE;

SILICON CARBIDE;

EID: 0033685267     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.338-342.1219     Document Type: Article

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