Double epitaxial layer power Schottky diodes with end in the ramp oxide technique

Microelectronics Journal

Volumn 27, Issue 1, 1996, Pages 67-72

  Badila, Marian ^a   Brezeanu, Gheorghe ^b  

^a ICCE   (Romania)

^b UNIVERSITY POLITEHNICA OF BUCHAREST   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONTACTS; ETCHING; HIGH TEMPERATURE OPERATIONS; OXIDES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

FORWARD CURRENT CAPABILITY; OXIDE RAMP ETCHING; POWER SCHOTTKY DIODE; REVERSE CURRENT TRANSIENT PULSES;

SCHOTTKY BARRIER DIODES;

EID: 0030084231     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2692(95)00023-2     Document Type: Article

References (12)

1. S.M. Sze, Physics of Semiconductor Devices, John Wiley, New York, 1981.
2. B.J. Baliga, Modern Power Devices, John Wiley, New York, 1987.
3. D. Dascalu, Gh. Brezeanu and P.A. Dan, Contactul Metal Semiconductor in Microelectronica, Ed. Academiei Romane, Bucharest, 1988.
4. M. Badila, Gh. Brezeanu, A. Rusu, B. Tudor, G. Dima and G. Antonoiu, Impurity lateral gradient Schottky diodes. Simulation and experiment, Proc. 17th Annual Semiconductor Conf. CAS, Sinaia, Romania, 1994, p. 77.
5. S.L. Tu and B.J. Baliga, On the reverse blocking characteristics of Schottky power diodes, IEEE Trans. Electron Devices, ED-39 (1992) 2813.
6. M. Badila, Gh. Brezeanu and C. Cobianu, Metoda de fabricatie diode Schottky de putere si inalta tensiune de strapungere, Patent No. 104755, Romania, 1991.
7. Gh. Brezeanu, M. Badila, P.A. Dan, F. Mitu and E. Golu, Diode Schottky de putere eu profil rampa de oxid, Automatica Electronica, 34 (1990) 19.
8. Gh. Brezeanu and M. Badila, Diode Schottky de curenti reziduali foarte mici, Automatica Electronica, 35 (1991) 45.
9. Gh. Brezeanu, M. Badila, C. Georgian and C. Manzararu, Bidimensional simulation of electric field and potential distribution in Schottky diodes with oxide ramp profile, in D. Dascalu and Gh. Brezeanu (eds.), Noi Cercetari in Microelectronica, Vol. 17, Ed. Academiei Romane, Bucharest, 1994, p. 74.
10. M. Badila and Gh. Brezeanu, Double epitaxial layer power Schottky diodes with end in the ramp oxide technique, Proc. 16th Annual Semiconductor Conf., CAS, Sinaia, Romania, 1993, p. 255.
11. Gh. Brezeanu, D. Dascalu, P.A. Dan, S. Negru and V. Traistaru, Changes in electrical characteristics of Al-Ti contacts on silicon, Microelectron. Reliab., 28 (1988) 205.
12. Gh. Brezeanu and P.A. Dan, Modelling of gradual interface intimate silicide/Si Schottky contacts, Solid-State Electron., 34 (1991) 95.