Effect of implant temperature on extended defects created by ion implantation in silicon

Diffusion and Defect Data. Pt A Defect and Diffusion Forum

Volumn 183, Issue , 2000, Pages 163-170

  Wong Leung, J ^a   Fatima, S ^a   Jagadish, C ^a   FitzGerald, J D ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; ION IMPLANTATION; THERMAL EFFECTS; TIN; TRANSMISSION ELECTRON MICROSCOPY;

ENERGY CONFIGURATION; IMPLANT TEMPARATURES;

SEMICONDUCTING SILICON;

EID: 0033684254     PISSN: 10120386     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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