A Monte Carlo binary collision model for BF2 Implants into (100) single-crystal silicon

Journal of the Electrochemical Society

Volumn 143, Issue 11, 1996, Pages 3784-3790

  Yang, S H ^a   Snell, C M ^b   Morris, S J ^a   Tian, S ^a   Parab, K ^a   Obradovich, B ^a   Morris, M ^a   Tasch, A F ^a,c  

^a The University of Texas at Austin   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON ENERGY LEVELS; ION IMPLANTATION; MONTE CARLO METHODS; SEMICONDUCTING SILICON; SILICON; SINGLE CRYSTALS;

DAMAGE GENERATION MODEL; ELECTRONIC STOPPING MODEL; MONTE CARLO BINARY COLLISION (MCBC) MODEL;

BORON COMPOUNDS;

EID: 0030286867     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837290     Document Type: Article

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