Investigation of poly-Si 1-xGe x for dual-gate CMOS technology

IEEE Electron Device Letters

Volumn 19, Issue 7, 1998, Pages 247-249

  Lee, Wen Chin ^a,b   King, Ya Chin ^a,b   King, Tsu Jae ^a,b   Hu, Chenming ^a,b  

^a IEEE   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; FABRICATION; GATES (TRANSISTOR); PERFORMANCE; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS;

MOS CAPACITORS;

MOS DEVICES;

EID: 0032123912     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.701432     Document Type: Article

References (12)

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