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Volumn 2, Issue , 2000, Pages 749-752

Accurate large-signal modeling of SiGe HBTs

Author keywords

[No Author keywords available]

Indexed keywords

GUMMEL-POON MODEL; LARGE SIGNAL MODEL; MILLIMETER WAVE OSCILLATORS; SILICON GERMANIUM;

EID: 0033678375     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article
Times cited : (8)

References (14)
  • 1
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    • St and SiGe millimeter-wave integrated circuits
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    • P. Russer, "St and SiGe Millimeter-Wave Integrated Circuits", IEEE Trans. MTT, Vol. 46, No. 5, May 1998, pp. 590-603.
    • (1998) IEEE Trans. MTT , vol.46 , Issue.5 , pp. 590-603
    • Russer, P.1
  • 2
    • 0032072280 scopus 로고    scopus 로고
    • SiGe HBT technology: A new contender for si-based rf and microwave circuit applications
    • May
    • J.D. Cressler, "SiGe HBT Technology: A New Contender for Si-Based RF and Microwave Circuit Applications", IEEE Trans. MTT, Vol. 46, No. 5, May 1998, pp. 572-589.
    • (1998) IEEE Trans. MTT , vol.46 , Issue.5 , pp. 572-589
    • Cressler, J.D.1
  • 3
    • 3042894581 scopus 로고    scopus 로고
    • Development, implementation and verification of a physics-based Si/SiGe HBT model for millimeter-wave nonlinear circuit simulations
    • th European Microwave Conference, 1996, pp. 903-905.
    • (1996) th European Microwave Conference , pp. 903-905
    • Bruce, S.1
  • 5
    • 0032671607 scopus 로고    scopus 로고
    • Analytical current-voltage relations for compact SiGe HBT models. Part I: The "idealized" HBT
    • July
    • M. Friedrich, H.-M. Rein, "Analytical Current-Voltage Relations for Compact SiGe HBT Models. Part I: The "Idealized" HBT", IEEE Trans. ED, Vol. 46, No. 7, July 1999, pp. 1384-1393.
    • (1999) IEEE Trans. ED , vol.46 , Issue.7 , pp. 1384-1393
    • Friedrich, M.1    Rein, H.-M.2
  • 6
    • 0032686529 scopus 로고    scopus 로고
    • Analytical current-voltage relations for compact SiGe HBT models. Part II: Application to practical HBTs and parameter extraction
    • July
    • M. Friedrich, H.-M. Rein, "Analytical Current-Voltage Relations for Compact SiGe HBT Models. Part II: Application to practical HBTs and Parameter Extraction", IEEE Trans. ED, Vol. 46, No. 7, July 1999, pp. 1394-1401.
    • (1999) IEEE Trans. ED , vol.46 , Issue.7 , pp. 1394-1401
    • Friedrich, M.1    Rein, H.-M.2
  • 7
    • 0033365527 scopus 로고    scopus 로고
    • Nonlinear modeling of a SiGe HBT with application to ultra low phase noise dielectric resonator oscillators
    • M. Regis et al, "Nonlinear Modeling of a SiGe HBT with Application to Ultra Low Phase Noise Dielectric Resonator Oscillators", IEEE MTT-S Digest, 1999, pp. 83-86.
    • (1999) IEEE MTT-S Digest , pp. 83-86
    • Regis, M.1
  • 8
    • 0033080260 scopus 로고    scopus 로고
    • Physics-based minority charge and transit time modeling for bipolar transistors
    • Februar
    • M. Schroter, T.-Y. Lee, "Physics-Based Minority Charge and Transit Time Modeling for Bipolar Transistors", IEEE Trans, on ED, vol. ED-46, No. 2, pp. 288-300, Februar 1999.
    • (1999) IEEE Trans, on ED , vol.ED-46 , Issue.2 , pp. 288-300
    • Schroter, M.1    Lee, T.-Y.2
  • 9
    • 0030270762 scopus 로고    scopus 로고
    • VBIC95 the vertical bipolar inter-company model
    • Oct
    • CC McAndrew et al, "VBIC95, The Vertical Bipolar Inter-Company Model", IEEE JSSC, Vol. 31, No. 10, Oct 1996, pp. 1476-1483.
    • (1996) IEEE JSSC , vol.31 , Issue.10 , pp. 1476-1483
    • McAndrew, C.C.1
  • 10
    • 0027701113 scopus 로고
    • A generalized charge-control relation and ist application to compact models for silicon based HBTs
    • November
    • M. Schroter, M. Friedrich, H.-M. Rein, "A Generalized Charge-Control Relation and ist Application to Compact Models for Silicon Based HBTs", IEEE Trans. ED, vol. ED-40, No. 11, November 1993, pp. 2036-2046.
    • (1993) IEEE Trans. ED , vol.ED-40 , Issue.11 , pp. 2036-2046
    • Schroter, M.1    Friedrich, M.2    Rein, H.-M.3
  • 12
    • 0032664042 scopus 로고    scopus 로고
    • Optimization of SiGe HBT's for operation at high current densities
    • July
    • A J. Joseph, J.D. Cressler, D.M. Richey, G. Niu, .Optimization of SiGe HBT's for Operation at High Current Densities", IEEE Trans. ED, Vol. 46, No. 7, July 1999, pp. 1347-1354.
    • (1999) IEEE Trans. ED , vol.46 , Issue.7 , pp. 1347-1354
    • Joseph, A.J.1    Cressler, J.D.2    Richey, D.M.3    Niu, G.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.