Nonlinear modeling of a SiGe HBT with applications to ultra low phase noise dielectric resonator oscillators

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 1999, Pages 83-86

  Regis, M ^a   Llopis, O ^a   Escotte, L ^a   Plana, R ^a   Gruhle, A ^a   Brazil, T J ^a   Chaubet, M ^a   Graffeuil, J ^a  

^a LAAS CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC DEVICES; ELECTRIC CONTACTS; MICROWAVE OSCILLATORS; NATURAL FREQUENCIES; SCATTERING PARAMETERS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SPURIOUS SIGNAL NOISE; THERMAL EFFECTS;

DIELECTRIC RESONATOR OSCILLATORS; LARGE SIGNAL MODEL; PHASE NOISE; SILICON GERMANIUM;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033365527     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)