Development, iplementation and verification of a physics-based Si/SiGe HBT model for millimetre-wave non-linear circuit simulations

1996 26th European Microwave Conference, EuMC 1996

Volumn 2, Issue , 1996, Pages 903-905

  Bruce, S ^a   Rydberg, A ^a   Schumacher, H ^b   Erben, U ^b   Luy, J F ^c   Karlsteen, M ^d   Willander, M ^d  

^a UPPSALA UNIVERSITY   (Sweden)

^b UNIVERSITY OF ULM   (Germany)

^c DAIMLER AG   (Germany)

^d LINKÖPING INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

UNCERTAINTY ANALYSIS;

EXTRACTION PROCEDURE; FABRICATION PROCESS; HBT MODELS; LARGE SIGNAL MODELS; MILLIMETRE WAVES; MODELING AND MEASUREMENT; PHYSICS-BASED; THERMAL DEPENDENCES;

COMPUTER AIDED DESIGN;

EID: 3042894581     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.1996.337722     Document Type: Conference Paper

References (6)

1. A. Schiuppen, U. Erben, A. Gruhle, H. Kibbel, H. Schumacher, and U. Kbnig, "Enhanced SiGe Heterojunction Bipolar Transistors with 160 GHZ-fmux" 1995, IEEE Intl. Electron Devices Meeting (IEDM '95) Tech. Dig. , pp. 30. 4. 1-30. 4. 4
2. D. A. Teeter, J. R. East, R. K. Mains, and G. I. Haddad, "Large-signal numerical and analytical HBT models", 1993, IEEE Trans. Electron Devices, vol. 40, no. 5, pp. 837-845
3. Q. M. Zhang, J. Hu, J. Sitch, R. K. Surridge, and J. M. Xu, "Anew large signal HBT model", 1994, IEEE MTTS Int. Microwave Symp. Dig. , San Diego, California, pp 1253-1256
4. A. Grahle, H. Kibbel, U. K6nig, U. Erben, and E. Kasper, "MBE-grown Si/SiGe HBTs with high t, ft, and fmax", 1992, IEEE Electron Device. Lett. , vol. 13, pp 206- 208
5. S. M. Sze, "Physics of semiconductor devices", 1981, John Wiley and Sons, 2nd ea. , p. 145
6. S. Bruce, M. Kim, A. Rydberg, K. M. Strohm, and F. Bei,Bwanger, "On the design of a 55 GHz Si/SiGe HBT frequency doubler operating close to Fmax", 1996, accepted for presentation at EuMC, Prague, Czech Republic.