OEIC-enabling LCI lasers with current guides: Combined theoretical-experimental investigation of internal operating mechanisms

IEEE Journal of Quantum Electronics

Volumn 34, Issue 7, 1998, Pages 1280-1287

  Sargent, Edward H ^a,b   Oe, Kunishige ^a,c,d,f,g,h   Caneau, Catherine ^d,e   Xu, J M ^a,b  

^a IEEE   (Canada)

^b UNIVERSITY OF TORONTO   (Canada)

^c NTT CORPORATION   (Japan)

^d TELCORDIA TECHNOLOGIES   (United States)

^e Corning Inc ^*  (United States)

^f KYOTO UNIVERSITY   (Japan)

^g KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^h JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

Author keywords

Integrated optoelectronics; Optoelectronic devices; Semiconductor device fabrication; Semiconductor device modeling; Semiconductor heterojunctions; Semiconductor lasers

Indexed keywords

FABRICATION; HETEROJUNCTIONS; INTEGRATED OPTOELECTRONICS; MODELS; OPTOELECTRONIC DEVICES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR LASERS;

CURRENT GUIDES; INTERNAL OPERATING MECHANISMS; LATERAL CURRENT INJECTION LASERS;

INJECTION LASERS;

EID: 0032122077     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.687873     Document Type: Article

References (16)

1. E. H. Sargent, G. L. Tan, and J. M. Xu, "Physical model of OEIC-compatible lateral current injection lasers," IEEE J. Select. Topics Quantum Electron., vol. 3, pp. 507-512, 1997.
2. Y. Kan, M. Yamanishi, M. Okuda, K. Mukaiyama, T. Ohnishi, M. Kawamoto, and I. Suemune, "Quantum-confined field-effect light emitters with high-speed switching capability," Appl. Phys. Lett., vol. 55, pp. 1149-1151, 1989.
3. I. Suemune, T. Takeoka, M. Yamanishi, and Y. Lee. "Gain-switching characteristics and fast transient of three-terminal size-effect modulation laser." IEEE J. Quantum Electron., vol. QE-22, pp. 1900-1908, 1986.
4. A. Furuya, M. Makiruchi, O. Wada, and T. Fujii, "AlGaAs/GaAs lateral current injection multiquantum well (LCI-MQW) laser using impurity-induced disordering," IEEE J. Quantum Electron., vol. 24. pp. 2448-2453, 1988.
5. Y. Honda, I. Suemune, N. Yauhira, a nd M. Yamanishi, "Continuous-wave operation of a lateral current injenction ridge waveguide Al-GaAs/GaAs laser with a selectively-doped heterostrucute," Jpn. J. Appl. Phys., vol. 30, pp. 990-991, 1991.
6. J. Ohta, K. Kuroda, K. Mitsunga, K. Kyuma, K. Hamanaka, and T. Nakayama, "Buried transverse-junction stripe laser for optoelctronic-integrated circuits," J. Appl. Phys., vol. 61, pp. 4933-4935, 1987.
7. Y. Kawamura, Y. Noguchi, and H. Iwamura,"Lateral current injection InGaAs/InAlAs MQW lasers grown by GSMBE/LPE hybrid method," Electron. Lett., vol. 29, pp. 102-104, 1993.
8. Y. Suzuki, S. Mukai, H. Yajima, and T. Sato, "Transverse junction buried heterostructure (TJ-BH) AlGaAs diode laser," Electron, Lett., vol. 23. pp. 384-385, 1987.
9. K. Oe, Y. Noguchi, and C. Caneau, "GaInAsP lateral current injection lasers on semi-insulting substrates," IEEE Photon. echnol. Lett., vol. 6, pp. 479-481, 1994.
10. D. A. Suda, H. Lu, T. Makino, and J. M. Xu, "Lacteral current injection current injection laser internal operation mechanisms," IEEE Photon. Technol. Lett., vol. 7, pp. 1122-1124, 1995.
11. E. H. Sargent G. Tan, and J. M. Xu, "Lacteral current injection lasers: Underlying mechanisms and design for improved high-power efficiency," J. Lightwave Technol., submitted for publication.
12. P. Rees, P. Blood, M. J. H. Vanhommerig, G. J. Davies, and P. J. Skevington, "The temperature dependence of threshold current of chemical beam epitacxy grown InGaAs/Inp lasers," Appl. Phys. Lett., vol 78. pp. 1804-1807, 1995.
13. P. Bhattacharya, Ed., Properities of Lattice-Matched and Strained Indium Gallium Arsenide. London, U.K.: INSPEC, 1993.
14. D. N. Nasledov, Y. G. Popov, N. V. Siukaev, and S. P. Starosel'tseva, Sov. Phys. Semicond., vol. 3. p. 387, 1969.
15. G. L. Tan, N. Bewatra, K. Lee, and J. M. Xu, "A two-dimensional non-isothermal finite element simulation of laser diodes," IEEE J. Quantum Electron., vol. 29, pp. 822-835, 1993.
16. R. F. Kazarinov and M. R. Pinto. "Carrier transport in laser heterostructures," IEEE J. Quantum Electron., vol. 30, pp. 49-53, 1994.