Lateral current injection lasers: Underlying mechanisms and design for improved high-power efficiency

Journal of Lightwave Technology

Volumn 16, Issue 10, 1998, Pages 1854-1864

  Sargent, Edward H ^a,b   Tan, Genlin ^a,c,d,e   Xu, Jimmy M ^a,f,g,h,i,j  

^a UNIVERSITY OF TORONTO   (Canada)

^b QUEEN S UNIVERSITY   (Canada)

^c TSINGHUA UNIVERSITY   (China)

^d BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^e UNIVERSITY OF CALIFORNIA   (United States)

^f UNIVERSITY OF MINNESOTA   (United States)

^g Ontario Laser Lightwave Res Ctr   (Canada)

^h Ontario Centre for Material Research   (Canada)

ⁱ Info Technology Research Centre

^j IEEE

more..

Author keywords

OEIC's; Optoelectronic integration; Semiconductor device modeling; Semiconductor lasers

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; INTEGRATED OPTOELECTRONICS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

HIGH-BANDGAP INTRINSIC MATERIALS; LATERAL CURRENT INJECTION LASERS; PARASITIC LEAKAGE;

INJECTION LASERS;

EID: 0032184122     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/50.721073     Document Type: Article

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