Band gap modification in Ne+-ion implanted In1-xGaxAs/InP and InAsyP1-y/InP quantum well structures

Journal of Applied Physics

Volumn 81, Issue 2, 1997, Pages 765-770

  Wan, J Z ^a,b   Simmons, J G ^a   Thompson, D A ^a  

^a MCMASTER UNIVERSITY   (Canada)

^b CITY UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000095313     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364440     Document Type: Article

References (12)

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