Elastic strain and composition of self-assembled GeSi nanoislands on Si(001)

Semiconductors

Volumn 34, Issue 1, 2000, Pages 6-10

  Vostokov, N V ^a   Gusev, S A ^a   Dolgov, I V ^a   Drozdov, Yu N ^a   Krasil'nik, Z F ^a   Lobanov, D N ^a   Moldavskaya, L D ^a   Novikov, A V ^a   Postnikov, V V ^a   Filatov, D O ^b  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^b LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033628867     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187942     Document Type: Article

References (11)

1. Y. M. Mo, D. E. Savage, B. S. Swartzentruber, and M. G. Lagally, Phys. Rev. Lett. 65, 1020 (1990).
2. G. Medeiros-Ribeiro, A. M. Bratkovski, T. I. Kamins, et al., Science 279, 353 (1998).
3. T. I. Kamins, E. C. Carr, R. S. Wiliams, and S. J. Rosner, J. Appl. Phys. 81, 211 (1997).
4. F. M. Ross, J. Tersoff, and R. M. Tromp, Phys. Rev. Lett. 80, 984 (1998).
5. M. I. Alonso and K. Winner, Phys. Rev. B: Condens. Matter 39, 10056 (1989).
6. J. Groenen, R. Carles, et al., Appl. Phys. Lett. 71, 3856 (1997).
7. Y. Chen and J. Washburn, Phys. Rev. Lett. 77, 4046 (1996).
8. A.-L. Barabasi, Appl. Phys. Lett. 70, 2565 (1997).
9. G. Abstreiter, P. Schittenhelm, C. Engel, et al., Semicond. Sci. Technol. 11, 1521 (1996).
10. T. I. Kamins, G. Medeiros-Ribeiro, D. A. A. Ohlberg, and R. S. Wiliams, J. Appl. Phys. 85, 1159 (1999).
11. S. A. Kukushkin and A. V. Osipov, Usp. Fiz. Nauk 168, 1103 (1998).