Low pressure MOVPE grown AlGaN for UV photodetector applications

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 401-406

  Omnes, F ^a   Marenco, N ^a   Haffouz, S ^a   Lahreche, H ^a   De Mierry, P ^a   Beaumont, B ^a   Hageman, P ^b   Monroy, E ^c   Calle, F ^c   Munoz E ^c  

^a CRHEA CNRS   (France)

^b RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^c UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ELECTRONIC EQUIPMENT MANUFACTURE; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PHOTODETECTORS; PHOTOLUMINESCENCE; SAPPHIRE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING FILMS;

ABSORPTION COEFFICIENT MEASUREMENTS; ALUMINIUM MOLE FRACTIONS; EPILAYERS; FULL WIDTH AT HALF MAXIMUM; NUCLEATION LAYERS; PHOTOCONDUCTORS; PHOTOTHERMAL DEFLECTION SPECTROSCOPY;

ALUMINUM ALLOYS;

EID: 0033528916     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00357-2     Document Type: Article

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