Influence of crucible and crystal rotation on oxygen-concentration distribution in large-diameter silicon single crystals

Journal of Crystal Growth

Volumn 166, Issue 1-4, 1996, Pages 669-674

  Kanda, Isao ^a   Suzuki, Takefumi ^b   Kojima, Kiyoshi ^c  

^a NIPPON STEEL CORPORATION   (Japan)

^b Proc Technol Research Laboratories   (Japan)

^c NSC Electron Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRUCIBLES; EVAPORATION; FLOW PATTERNS; HEAT CONVECTION; MATHEMATICAL MODELS; OXYGEN; REYNOLDS NUMBER; SEMICONDUCTING SILICON; SURFACE STRUCTURE;

CRUCIBLE ROTATION RATE; CRYSTAL ROTATION RATE; FREE SURFACES; INTERNAL MOTION; OXYGEN CONCENTRATION DISTRIBUTION; SEED ROTATION; SHOULDER TRANSITION REGION; SILICON MELT; SWEEP LENGTH; WATER MODEL MELT FLOW SIMULATION;

SINGLE CRYSTALS;

EID: 0030231265     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00494-7     Document Type: Article

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