Sensitivity of oxygen sensors in silicon melt to temperature fluctuation

Journal of the Electrochemical Society

Volumn 144, Issue 11, 1997, Pages 4045-4049

  Kakimoto, Koichi ^a   Noguchi, Hiroshi ^b   Eguchi, Minoru ^b  

^a KYUSHU UNIVERSITY   (Japan)

^b NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; DEGRADATION; OXIDES; SEMICONDUCTING SILICON; SENSITIVITY ANALYSIS; THERMAL EFFECTS;

ELECTROMOTIVE FORCE; SILICON MELT; TEMPERATURE FLUCTUATION;

OXYGEN SENSORS;

EID: 0031269381     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838133     Document Type: Article

References (7)

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