TED of boron in presence of EOR defects: The role of the evolution of Si self-interstitial supersaturation between the loops

Proceedings of the International Conference on Ion Implantation Technology

Volumn , Issue , 1996, Pages 622-625

  Bonafos, C ^a   de Mauduit, B ^a   Omri, M ^a   BenAssayag, G ^a   Claverie, A ^a   Alquier, D ^a   Martinez, A ^a   Mathiot, D ^a  

^a CEMES CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; COMPOSITION EFFECTS; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); SUPERSATURATION; TRANSMISSION ELECTRON MICROSCOPY;

DISLOCATION LOOPS; OSTWALD RIPENING THEORY;

SEMICONDUCTING SILICON;

EID: 0030358651     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (26)