Epitaxial ternary Er0.5Y0.5Si1.7 suicide layers formed by channeled ion beam synthesis

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 621-625

  Hogg, S M ^a   Vantomme, A ^a,c   Wu, M F ^a,b   Yao, Shude ^b   Pattyn, H ^a   Langouche, G ^d  

^a KU LEUVEN   (Belgium)

^b PEKING UNIVERSITY   (China)

^c FUND FOR SCIENTIFIC RESEARCH   (Belgium)

^d NONE

Author keywords

Channeled ion beam synthesis; Ternary suicide

Indexed keywords

CRYSTAL ORIENTATION; EPITAXIAL GROWTH; ION BEAMS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON WAFERS; STRAIN; SYNTHESIS (CHEMICAL); X RAY CRYSTALLOGRAPHY;

CHANNELED ION BEAM SYNTHESIS (CIBS);

SEMICONDUCTING FILMS;

EID: 0033513754     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00723-X     Document Type: Article

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