Role of defects in current transport through tetrahedral amorphous carbon-based metal-semiconductor-metal structures

Journal of Non-Crystalline Solids

Volumn 260, Issue 1-2, 1999, Pages 31-40

  Hu, Y H ^a   Shi, X ^a   Liu, E ^a   Shi, J R ^a   Cheah, L K ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; AMORPHOUS MATERIALS; CARBON; CARRIER MOBILITY; CURVE FITTING; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; ELECTRONIC DENSITY OF STATES; FERMI LEVEL; MATHEMATICAL MODELS; PHONONS; THIN FILMS;

AMORPHOUS CARBON; PHONON ASSISTED TUNNELING; THERMAL EMISSION;

BAND STRUCTURE;

EID: 0033356359     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(99)00560-8     Document Type: Article

References (27)

1. Shur M. Physics of Semiconductor Devices. 1990;Prentice-Hall, Englewood Cliffs, NJ.
2. J.J. Liou, Advanced Semiconductor Device Physics and Modeling, Artech House, Boston, MA, 1994.
3. Davis E.A., Mott N.F. Philos. Mag. 22:1970;903.
4. Mott N.F. Philos. Mag. 19:1969;835.
5. P. Nagels, Electronic transport in amorphous semiconductors, in: M.H. Brodsky (Ed.), Amorphous Semiconductors, Springer, Berlin, 1979.
6. P. Nagels, Electronic properties of amorphous semiconductors, in: J.T. Devreese, V.E. Van Doren (Eds.), Linear and Nonlinear Electron Transport in Solids, Plenum, New York, 1976.
7. H. Overhof, Hopping conductivity in disordered solid, in: J. Treusch (Ed.), Festkörperprobleme, Advances in Solid State Physicals, vol. XVI, Vieweg, Braunschweig, 1976.
8. Lau S.P., Ahannon J.M., Sealy B.J. J. Non-Cryst. Solids. 227-230:1998;533.
9. Hill R.M. Philos. Mag. 23:1971;59.
10. Silva S.R.P., Amaratunga G.A.J. Thin Solid Films. 253:1994;146.
11. Baranovskii S.D., Cleve B., Hess R., Thoms P. J. Non-Cryst. Solids. 164-166:1993;437.
12. Nagy A., Hundhausen M., Ley L., Brunst G., Holzenkämpger E. J. Non-Cryst. Solids. 164-166:1993;529.
13. Cheah L.K., Shi X., Shi J.R., Liu E.J., Silva S.R.P. J. Non-Cryst. Solids. 242:1998;40.
14. P. Oelhafen, D. Ugolini, S. Schelz, J. Eitle, in: R.E. Clausing (Ed.), Diamond and Diamond-Like Films and Coating, NATO ASI, vol. B, Plenum, New York, 1991.
15. Fallon P.J., Veerasamy V.S., Davis C.A., Robertson J., Amaratunga G.A.J., Milne W.I., Koskinen J. Phys. Rev. B. 48:1993;4777.
16. Chowalla M., Robertson J., Chen C.W., Silva S.R.P., Davis C.A., Amaratunga G.A.J., Milne W.I. J. Appl. Phys. 81:1997;139.
17. Foroahi A.R., Bloomer I. Phys. Rev. B. 34:1986;10.
18. Shi X., Flynn D., Tay B.K., Prower S., Nugent K.W., Silva S.R.P., Lifshitz Y., Milne W.I. Philos. Mag. B. 76:1997;351.
19. W.E. Spear, P.G. Lecomber, Amorphous tetrahedrally bonded solid, in: J. Mort, D.M. Pai (Eds.), Photoconductivity and Related Phenomena, 1976.
20. S.S. Cohen, VLSI Electronics Microstructure Science, Vol. 13 Metal-Semiconductor Contacts and Devices, Academic press, New York, 1986.
21. Sebesteyen T. Solid-State Electron. 25:1980;543.
22. C.M. Wolfe, Physical Properties of Semiconductors, Prentice-Hall, Englewood Cliffs, NJ, 1989.
23. R.S. Crandall, Photoconductivity, in: J.I. Pankove (Ed.), Semiconductors and Semimetals, Academic Press, Orlando, FL, 1984.
24. N.F. Mott, E.A. Davis, Electronic Processes in Non-Crystalline Material, Clarendon, Oxford, 1971.
25. Shi X., Tay B.K., Tan H.S., Zhong Li., Tu Y.Q., Silva S.R.P., Milne W.I. J. Appl. Phys. 79:1996;7239.
26. Robertson J., Davis C.A. Diamond Relat. Mater. 4:1995;297.
27. Shi X., Fu H., Shi J.R., Cheah L.K., Tay B.K., Hui P. J. Phys.: Condens. Matter. 10:1998;9293.