Effect of buffer layer and III/V ratio on the surface morphology of GaN grown by MBE

Materials Research Society Symposium - Proceedings

Volumn 537, Issue , 1999, Pages

  Piquette, E C ^a   Bridger, P M ^a   Beach, R A ^a   McGill, T C ^a  

^a California Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NITROGEN; PLASMA SOURCES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SURFACE ROUGHNESS; SURFACES;

ALUMINUM NITRIDE; GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033356052     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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