Auger recombination dynamics of InxGa1-xSb

Semiconductor Science and Technology

Volumn 14, Issue 12, 1999, Pages 1026-1030

  Findlay, P C ^a   Pidgeon, C R ^a   Pellemans, H ^a,d   Kotitschke, R ^b   Murdin, B N ^b   Ashley, T ^c   Johnson, A D ^c   White, A M ^c   Elliott, C T ^c  

^a HERIOT WATT UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF SURREY   (United Kingdom)

^c DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

^d UNIVERSITY HOSPITAL RWTH AACHEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; INFRARED DEVICES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR LASERS;

PUMP PROBE MEASUREMENT;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0033349498     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/12/302     Document Type: Article

References (21)

1. White A M 1985 Infrared Phys. 25 729
2. Ashley T, Dean A B, Elliot C T, Johnson A D, Pryce G J, White A M and Whitehouse C R 1993 Semicond. Sci. Technol. 8 386 Ashley T, Dean A B, Elliot C T, Johnson A D, Pryce G J, White A M and Whitehouse C R 1994 Appl. Phys. Lett. 64 2433
3. Ashley T, Dean A B, Elliot C T, Johnson A D, Pryce G J, White A M and Whitehouse C R 1993 Semicond. Sci. Technol. 8 386 Ashley T, Dean A B, Elliot C T, Johnson A D, Pryce G J, White A M and Whitehouse C R 1994 Appl. Phys. Lett. 64 2433
4. Ashley T, Elliott C T, Jeffries R, Johnson A D, Pryce G G, White A M and Carroll M 1997 Appl. Phys. Lett. 70 931
5. Youngdale E R, Meyer J R, Hoffman C A, Bartoli F J, Grein C H, Young P M, Ehrenreich H, Miles R H and Chow D H 1994 Appl. Phys. Lett. 64 3160
6. Biefeld B M, Allerman A A, Kurtz S R and Burkhart J H 1997 J. Electron. Mater. 26 1225
7. Flatté M E, Hassenberg T C, Olesberg J T, Anson S A, Boggess T F, Yan C and McDaniel D L Jr 1997 Appl. Phys. Lett. 71 3764
8. Pidgeon C R, Murdin B N and Ciesla C 1998 Prog. Quantum Electron. 21 361
9. Meyer J R et al 1998 IEEE Proc. Optoelectron. 145 275
10. Tredicucci A, Gmachl C, Capasso F, Sivco D L, Hutchinson A L and Cho A Y 1999 Appl. Phys. Lett. 74 638
11. Felix C L, Bewley W W, Olafsen L J, Stokes D W, Aifer W H, Vurgaftman I, Meyer J R and Yang M J 1999 IEEE Photon. Technol. Lett. 11 964
12. Johnson A D, Smout A B J, Cairns J W, Pryce G J, Pidduch A J, Jefferies R, Ashley T and Elliott C T 1998 Mater. Res. Soc. Symp. Proc. 484 143
13. Beattie A R and White A M 1996 J. Appl. Phys. 79 802
14. Ciesla C M et al 1996 J. Appl. Phys. 80 2994
15. Ciesla C M, Murdin B N, Phillips T J, White A M, Beattie A R, Langerak C J G M, Elliott C T, Pidgeon C R and Sivananthan S 1997 Appl. Phys. Lett. 71 491
16. Findlay P C et al 1998 Phys. Rev. B 58 12908
17. Vodopyanov K L, Grainer H, Phillips C C and Tate T J 1992 Phys. Rev. B 46 13 194
18. Chazapis V, Blom H A, Vodopyanov K L, Norman A G and Phillips C C 1995 Phys. Rev. B 52 2516
19. Landolt-Bornstein 1991 Semiconductors: Group IV Elements and III-V Compounds (Data in Science and Technology) (Berlin: Springer)
20. Beattie A R and White A M 1997 Semicond. Sci. Technol. 12 359
21. Snow P A, Maly P, Westland D J and Ryan J F 1989 Solid State Electron. 32 1485