Fullerene derivatives as novel resist materials for fabrication of mems devices by electron beam lithography

Materials Research Society Symposium - Proceedings

Volumn 546, Issue , 1999, Pages 219-222

  Robinson, A P G ^a   Palmer, R E ^a   Tada, T ^a   Kanayama, T ^b   Shelley, E J ^b   Preece, J A ^a  

^a UNIVERSITY OF BIRMINGHAM   (United Kingdom)

^b NATL INST FOR ADV INTERDISC RES   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BENZENE; DERIVATIVES; ELECTRON BEAM LITHOGRAPHY; ETCHING; FULLERENES; PHOTORESISTS;

HIGH RESOLUTION NEGATIVE TONE RESISTS;

MICROELECTROMECHANICAL DEVICES;

EID: 0033348835     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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