Comparison of lifetime and threshold current damage factors for multi-quantum-well (MQW) GaAs/GaAlAs laser diodes irradiated at different proton energies

IEEE Transactions on Nuclear Science

Volumn 46, Issue 6 PART 1, 1999, Pages 1797-1803

  Lee, S C ^a   Zhao, Y F ^a   Schrimpf, R D ^b   Neifeld, M A ^b   Galloway, K F ^b  

^a VANDERBILT UNIVERSITY   (United States)

^b University of Arizona   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PROTON DAMAGE EFFECTS; PROTON ENERGY; THRESHOLD CURRENT DAMAGE FACTOR;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; HETEROJUNCTIONS; IRRADIATION; OPTICAL PROPERTIES; PROTONS; RADIATION DAMAGE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTOR LASERS;

EID: 0033346701     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.819156     Document Type: Article

References (13)

1. P.S. Zory, Jr., Quantum Well Lasers, Academic Press, Inc., 1993.
2. B.D. Evans, "Survivability of Quantum-Well Optoelectronic Devices for Space Applications," SPIE, Vol. 2215, pp. 23-28, 1994.
3. B.D. Evans, H.E. Hager and B.W. Hughlock, "5.5-MeV Proton Irradiation of a Strained Quantum-Well Laser Diode and a Multiple Quantum-Well Broad-Band LED," IEEE Tran. Nud. Sei., Vol. 40, No. 6, pp. 1645-1654, 1993.
4. Y.F. Zhao, A.R. Patwary, R.D. Schrimpf, M.A. Neifeld and K.P. Galloway, "200MeV Proton Damage Effects on Multi-Quantum Well Laser Diodes," IEEE Tran. Nud. Sei., Vol. 44, No. 6, pp. 1898-1905, 1997.
5. Y.F. Zhao, R.D. Schrimpf, A.R. Patwary, M,A. Neifeld, A.W. Al-Johani, R.A. Weller and K.F. Galloway, "Annealing Effects on Multi-Quantum Well Laser Diodes after Proton Irradiation," IEEE Tran. Nud. Sei., Vol. 45, No. 6, pp. 2826-2832, 1998.
6. A. Shima, M. Miyashita, T, Miura, T. Kadowaki, N. Hayafuji, M. Aiga and W. Susaki, "Uniform and HighPower Characteristics of 780-nm AlGaAs TQW Laser Diodes Fabricated by Large-Scale MOCVD," IEEE Journal of Quantum Electronics, Vol. 30, No. 1, pp. 2430, 1994.
7. C.C. Foster, S.L. Cascy, A.L. Johnson, P. Micsle, N. Sifri, A.M. Skces, and K.M. Murray, "Radiation Effects Test Facility at the Indiana University Cyclotron Facility," Proceedings of the J4'h International Conference on the Application of Accelerators in Research and Industry, published in Apr, 1997.
8. C.E. Barnes and J.J. Wiczer, "Radiation Effects in Optoelectronic Devices," Sandia National Laboratories Report Number SAND-84-0771, pp. 157-158, 1984.
9. B.H. Rose and C.E. Barnes, "Proton Damage Effects on Light Emitting Diodes," J. Appl. Phys., Vol. 53, No. 3, pp. 1772-1780, 1982.
10. G.P. Agrawal and N.K. Dutta, Long-wave Length Semiconductor Lasers, pp. 184-187, Van Nostrand Reinhold Company Inc., 1986.
11. S.M. Sze, Physics of Semiconductor Devices, pp. 89-92, John Wiley & Sons, Inc., 1981.
12. J. Singh, Semiconductor Optoelectronics; Physics and Technology, p. 452, McGraw-Hill, Inc., 1995.
13. G.P. Summers, E.A. Burke, P.Shapiro, S.R. Messenger and R.J. Walters, "Damage Correlations in Semiconductors Exposed to Gamma, Electron and Proton Radiations," IEEE Tran. Nucl. Sei., Vol. 40, No. 6, pp. 1372-1379, 1993.