Photoluminescence of strain-engineered MBE-grown GaN and InGaN quantum-well structures

Materials Research Society Symposium - Proceedings

Volumn 468, Issue , 1997, Pages 299-304

  Kruger, J ^a   Kisilowski, C ^a   Klockenbrink, R ^a   Sudhir, G S ^a   Kim, Y ^a   Rubin, M ^a   Weber, E R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MANGANESE; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; STRAIN; SUBSTRATES; THIN FILMS;

GROWTH RATE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030691492     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-468-299     Document Type: Conference Paper

References (12)