Effects of H2/NH3 flow-rate ratio on the luminescent, structural, and electrical properties of GaN epitaxial layers grown by MOCVD

Journal of Electronic Materials

Volumn 28, Issue 10, 1999, Pages 1096-1100

  Yang, Chien Cheng ^a,b   Koh, Pao Ling ^c   Wu, Meng Chyi ^a   Lee, Chih Hao ^a   Chi, Gou Chung ^c  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ENERGY GAP; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH;

FLOW RATE RATIO;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033343448     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0244-2     Document Type: Article

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