Surface morphology of MOVPE-grown GaN on (0001) sapphire

Journal of Crystal Growth

Volumn 129, Issue 1-2, 1993, Pages 81-90

  Sasaki, T ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; MORPHOLOGY; ORGANOMETALLICS; SAPPHIRE;

GALLIUM NITRIDE; VAPOR PHASE EPITAXY;

GALLIUM COMPOUNDS;

EID: 0027904955     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(93)90436-Z     Document Type: Article

References (17)

1. Proc. 9th Intern. Symp. on GaAs and Related Compounds
2. Proc. 16th Intern. Symp. on GaAs and Related Compounds
3. The Equilibrium Pressure of N2 over GaN
4. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
5. Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy