Effect of N/Ga flux ratio in GaN buffer layer growth by MBE on (0001) sapphire on defect formation in the GaN main layer

Materials Research Society Symposium - Proceedings

Volumn 572, Issue , 1999, Pages 295-300

  Ruvimov, S ^a,b   Liliental Weber, Z ^a   Washburn, J ^a   Kim, Y ^c   Sudhir, G S ^c   Krueger, J ^c   Weber, E R ^c  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b Mitsubishi Silicon America   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); GALLIUM; GRAIN BOUNDARIES; LUMINESCENCE; MOLECULAR BEAM EPITAXY; NITROGEN; SAPPHIRE; TRANSMISSION ELECTRON MICROSCOPY;

BUFFER LAYERS; DEFECT FORMATION; DISLOCATION DENSITY; EPITAXIAL LAYERS; FLUX RATIO; INVERSION DOMAIN BOUNDARIES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033342278     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-572-295     Document Type: Conference Paper

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