High-performance wafer-bonded bottom-emitting 850-nm VCSEL's on undoped GaP and sapphire substrates

IEEE Photonics Technology Letters

Volumn 11, Issue 12, 1999, Pages 1542-1544

  Lin, Chao Kun ^a   Ryu, Sang Wan ^a   Dapkus, P Daniel ^a  

^a UNIVERSITY OF SOUTHERN CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; ELECTRIC CURRENTS; LASER RESONATORS; OXIDATION; QUANTUM EFFICIENCY; REFRACTIVE INDEX; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS;

GALLIUM PHOSPHIDE; THRESHOLD CURRENTS; VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSEL); WAFER BONDING;

SEMICONDUCTOR LASERS;

EID: 0033342164     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.806840     Document Type: Article

References (11)

1. J. W. Goodman, F. J. Leonberger, S.-Y. Kung, and R. Athale, "Optical interconnections for VLSI systems," Proc. IEEE, vol. 72, pp. 850-866, 1984.
2. S. Kawai, "Free-space mulitstage optical interconnection network using micro lens arrays," J. Lightwave Technol., vol. 9, no. 12, pp. 1774-1779, 1991.
3. L. Huffaker, D. G. Deppe, K. Kumar, and T. J. Rogers, "Native-oxide defined ring contact for low threshold vertical-cavity lasers," Appl. Phys. Lett., vol. 65, pp. 97-99, 1994.
4. G. M. Yang, M. H. MacDougal, and P. D. Dapkus, "Ultralow threshold current vertical cavity surface-emitting laser obtained with selective oxidation," Electron Lett., vol. 31, pp. 886-888, 1995.
5. K. L. Lear, K. D. Choquette, R. P. Schneider, Jr., S. P. Kilcoyne, and K. M. Geib, "Selectively oxidized vertical-cavity surface-emitting lasers with 50% power conversion efficiency," Electron. Lett., vol. 31, pp. 208-209, 1995.
6. R. P. Schneider, Jr., M. R. T. Tan, S. W. Corzine, and S. Y. Wang, "Oxide-confined 850 nm vertical-cavity lasers for multimode-fiber data communications," Electron. Lett., vol. 32, pp. 1300-1302, 1996.
7. R. Jäger, M. Grabherr, C. Jung, R. Michalzik, G. Reiner, B. Weigl, and K. J. Ebeling, "57% wallplug efficiency oxide-confined 850 nm wavelength GaAs VCSEL's," Electron. Lett., vol. 33, pp. 330-331, 1997.
8. K. D. Choquette, K. M. Geib, B. Roberds, H. Q. Hou, R. D. Twesten, and B. E. Hammons, "Short wavelength bottom-emitting vertical cavity lasers fabricated using wafer bonding," Electron. Lett., vol. 34, pp. 1404-1405, 1998.
9. C.-K. Lin, S.-W. Ruy, W.-J. Choi, and P. D. Dapkus, "Wafer bonded bottom emitting 850 nm VCSEL's on GaP substrates," to be published, Photon. Technol. Lett., vol. 11, pp. 937-939, Aug. 1999.
10. A. E. Bond, P. D. Dapkus, and J. D. O'Brien, "Aperture placement effects in oxide-defined vertical-cavity surface-emitting lasers," IEEE Photon. Technol. Lett., vol. 10, pp. 1362-1364, 1998.
11. M. Osinski and W. Nakwaski, "Thermal effects in vertical-cavity surface emitting lasers," Current Trends in Vertical Cavity Surface Emitting Lasers, T. P. Lee, Ed., New York: World Scientific, 1995.