Oxide-confined 850 nm vertical-cavity lasers for multimode-fibre data communications

Electronics Letters

Volumn 32, Issue 14, 1996, Pages 1300-1302

  Schneider Jr , R P ^a   Tan, M R T ^a   Corzine, S W ^a   Wang, S Y ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

Semiconductor junction lasers; Vertical cavity surface emitting lasers

Indexed keywords

ASYNCHRONOUS TRANSFER MODE; DATA COMMUNICATION SYSTEMS; ELECTRIC CURRENTS; FABRICATION; OXIDES; SEMICONDUCTOR JUNCTIONS; STANDARDIZATION; TELECOMMUNICATION LINKS;

MULTIMODE FIBRE DATA LINKS; NATIVE OXIDE; OXIDE CONFINEMENT; THRESHOLD CURRENTS; VERTICAL CAVITY SURFACE EMITTING LASER; WALLPLUG EFFICIENCIES;

SEMICONDUCTOR LASERS;

EID: 0030568653     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960876     Document Type: Article

References (14)

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