Short wavelength bottom-emitting vertical cavity lasers fabricated using wafer bonding

Electronics Letters

Volumn 34, Issue 14, 1998, Pages 1404-1405

  Choquette, K D ^a   Geib, K M ^a   Roberds, B ^a   Hou, H Q ^a   Twesten, R D ^a   Hammons, B E ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; ELECTRIC RESISTANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES;

VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL); WAFER BONDING;

SEMICONDUCTOR LASERS;

EID: 0032115383     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981002     Document Type: Article

References (6)

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2. FATHOLLAHNEJAD, H., MATHINE, D.L., DROOPAD, R , MARACAS, G.N., and DARYANANI, S.: 'Vertical-cavity surface-emitting lasers integrated onto silicon substrates by PdGe contacts', Electron. Lett., 1994, 30, pp. 1235-1236
3. KOHAMA, Y., OHISO, Y., and KUROKAWA, T.: '0.85μm bottom-emitting vertical-cavity surface-emitting laser diode arrays grown on AlGaAs substrates', Electron. Lett., 1994, 30, pp. 1406-1407
4. CHOQUETTE, K.D., SCHNEIDER, R.P., JR., LEAR, K.L., and GEIB, K.M.: 'Low threshold voltage vertical-cavity lasers fabricated by selective oxidation', Electron. Lett., 1994, 30, pp. 2043-2044
5. LO, Y.H., BHAT, R., HWANG, D.M., KOZA, M.A., and LEE, T.P.: 'Bonding by atomic rearrangement of InP/InGaAsP 1.5μm wavelength lasers on GaAs substrates', Appl. Phys. Lett., 1991, 58, pp. 1961-1963
6. CHOQUETTE, K.D., CHOW, W.W., HADLEY, G.R., HOU, H.Q., and GEIB, K.M.: 'Scalability of small-aperture selectively oxidized vertical-cavity lasers', Appl. Phys. Lett., 1997, 70, pp. 823-825