The nature of ripples and islands in strained SiGe/Si heteroepitaxy: Nucleation vs. instability phenomena

Materials Research Society Symposium - Proceedings

Volumn 570, Issue , 1999, Pages 199-204

  Christiansen, S H ^a   Albrecht, M ^b   Becker, M ^a   Strunk, H P ^b   Wawra, H ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; BISMUTH; CHEMICAL VAPOR DEPOSITION; DIFFUSION; EPITAXIAL GROWTH; LIQUID PHASE EPITAXY; MOLECULAR BEAM EPITAXY; NUCLEATION; THERMODYNAMIC STABILITY;

HETEROEPITAXY; INSTABILITY PHENOMENA; RIPPLES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033341178     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-570-199     Document Type: Article

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