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Volumn 134, Issue 1-4, 1998, Pages 95-102

Observation of stress effects on GaAs at the interface of molecular beam epitaxy grown ZnSe/GaAs(100) heterostructures

Author keywords

Difference reflectance; Dislocations; GaAs; Interface; Photoreflectance; Strain; X ray diffraction; ZnSe GaAs heterostructures

Indexed keywords

DISLOCATIONS (CRYSTALS); LIGHT REFLECTION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS; STRAIN; STRESS ANALYSIS; X RAY CRYSTALLOGRAPHY;

EID: 0032165224     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00237-2     Document Type: Article
Times cited : (7)

References (30)
  • 24
    • 0009056339 scopus 로고
    • Numerical data and functional relationships in science and technology
    • O. Madelung (Ed.), Physics of Group IV Elements and III-V Compounds, and Vol. 22a, Intrinsic Properties of Group IV Elements and III-V, II-VI and I-VII Compounds, Springer, Berlin
    • Landolt-Börnstein, Numerical data and functional relationships in science and technology, in: O. Madelung (Ed.), Group III: Crystal and Solid State Physics, Vol. 17a, Physics of Group IV Elements and III-V Compounds, and Vol. 22a, Intrinsic Properties of Group IV Elements and III-V, II-VI and I-VII Compounds, Springer, Berlin, 1982 and 1987, respectively.
    • (1982) Group III: Crystal and Solid State Physics , vol.17 A
    • Landolt-Börnstein1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.