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Volumn 86, Issue 1, 1999, Pages 425-429

Near band-edge optical properties of GaAs at interfaces of ZnSe/GaAs/ GaAs by phase selection in photoreflectance

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SPECTROSCOPIC ANALYSIS; SUBSTRATES;

EID: 0032614141     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370747     Document Type: Article
Times cited : (8)

References (23)
  • 16
    • 0030151786 scopus 로고    scopus 로고
    • L. F. Lastras Martínez and A. Lastras Martínez, Phys. Rev. B 54, 10726 (1996); Solid State Commun. 98, 479 (1996).
    • (1996) Solid State Commun. , vol.98 , pp. 479


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.