Dislocation-induced effects in the reflectance-difference spectrum of semi-insulating GaAs (100)

Solid State Communications

Volumn 98, Issue 5, 1996, Pages 479-483

  Lastras Martinez L F ^a   Lastras Martinez A ^a  

^a INSTITUTO DE INVESTIGACIÓN EN COMUNICACIÓN ÓPTICA   (Mexico)

Author keywords

A. semiconductors; A. surfaces and interfaces; D. optical properties

Indexed keywords

ANISOTROPY; CHARACTERIZATION; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); LATTICE CONSTANTS; OPTICAL PROPERTIES; STRAIN; SURFACES;

ANISOTROPIC SURFACE STRAIN; DISLOCATION INDUCED EFFECTS; OPTICAL ANISOTROPY; REFLECTANCE DIFFERENCE SPECTRUM; SEMI-INSULATING GALLIUM ARSENIDE; ZINCBLENDE SEMICONDUCTOR;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030151786     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(95)00721-0     Document Type: Article

References (21)

1. D.E. Aspnes, J. Vac. Sci. Technol. B3, 1498 (1985).
2. W.L. Mochán & R.G. Barrera, Phys. Rev. Lett. 55, 1192 (1985).
3. Y.C. Chang, S.F. Ren & D.E. Aspnes, J. Vac. Sci. Technol. A10, 1856 (1992).
4. D.E. Aspnes & A.A. Studna, J. Vac. Sci. Technol. A5, 546 (1987).
5. S.E. Acosta-Ortiz & A. Lastras-Martínez, Phys. Rev. B40, 1426 (1989); SPIE Symp. Proc. 1286, 31 (990).
6. S.E. Acosta-Ortiz & A. Lastras-Martínez, Phys. Rev. B40, 1426 (1989); SPIE Symp. Proc. 1286, 31 (990).
7. D.E. Aspnes, J.P. Harbison, A.A. Studna, L.T. Florez & K. Kally, J. Vac. Sci. Technol. B6, 1127 (1988).
8. D.E. Aspnes, E. Colas, A.A. Studna, R. Bhat, M.A. Koza & V.G. Keramidas, Phys. Rev. Lett. 61, 2782 (1988).
9. H. Tanaka, E. Colas, I. Kamiya, D.E. Aspnes & R. Bhat, Appl. Phys. Lett. 59, 3443 (1991).
10. See for instance, J.P. Hirth & J. Lothe, Theory of Dislocations, p. 373. Krieger, Malabar, Florida (1992).
11. M.S. Abrahams, J. Blanc & C.J. Buiocchi, Appl. Phys. Lett. 21, 185 (1972).
12. L.F. Lastras-Martínez, A. Lastras-Martínez & R.E. Balderas-Navarro, Rev. Sci. Instrum. 64, 2147 (1993).
13. D.E. Aspnes, Surf. Sci. 37, 418 (1973).
14. R. Wang & D. Jiang, J. Appl. Phys. 72, 3826 (1992).
15. I. Yonenaga & K. Sumino, J. Appl. Phys. 65, 85 (1989).
16. J.D. Eshelby, W.T. Read & W. Shockley, Acta Metalurgica 1, 251 (1953).
17. See for instance, [9], p. 59.
18. See for instance, L.D. Landau & E.M. Lifshitz, Course of Theoretical Physics, Vol. 7, p. 113. Pergamon Press, Oxford (1986).
19. F.H. Pollak & M. Cardona, Phys. Rev. 172, 816 (1968).
20. J.E. Cunningham, T.H. Chiu, A. Ourmazd, J. Shah & T. Tsang, J. Appl. Phys. 60, 1986 (4165).
21. A.S. Jordan, A.R. Von Neida & R. Caruso, J. Crystal Growth 76, 243 (1986).