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Volumn 146, Issue 11, 1999, Pages 4303-4308

In situ phosphorus doping during silicon epitaxy in an ultrahigh vacuum rapid thermal chemical vapor deposition reactor

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; EPITAXIAL GROWTH; FILM GROWTH; INTERFACES (MATERIALS); PHOSPHORUS; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

EID: 0033337063     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1392631     Document Type: Article
Times cited : (6)

References (37)
  • 30
    • 0003798188 scopus 로고
    • ™ Outokumpu Research Oy, Pori, Finland
    • ™ Outokumpu Research Oy, Pori, Finland (1994).
    • (1994) HSC Chemistry for Windows


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.