Optimization of process conditions for selective silicon epitaxy using disilane, hydrogen, and chlorine

Journal of the Electrochemical Society

Volumn 144, Issue 9, 1997, Pages 3309-3315

  O'Neil, Patricia A ^a   Öztürk, Mehmet C ^a   Violette, Katherine E ^a,b   Batchelor, Dale ^a   Christensen, Kim ^a   Maher, Dennis M ^a  

^a North Carolina State University   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; CHEMISTRY; CHLORINE; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; HYDROGEN; IMPURITIES; OPTIMIZATION; SEMICONDUCTING SILICON; SILANES;

PROCESS CONDITION; SELECTIVE SILICON EPITAXY; SELECTIVITY;

EPITAXIAL GROWTH;

EID: 0031234537     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838003     Document Type: Article

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