A comparative study of laser- and ion implantation-induced quantum well intermixing in GaInAsP/InP microstructures

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2991, Issue , 1997, Pages 113-118

  Dubowski, Jan J ^a   Charbonneau, N Sylvain ^a   Roth, Alain P ^a   Poole, Philip J ^a   Lacelle, Charles ^a   Buchanan, Margaret ^a   Mitchell, Ian V ^b   Goldberg, Richard D ^b  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b UNIVERSITY OF WESTERN ONTARIO   (Canada)

Author keywords

Ion implantation; Laser induced disordering; Photonic integrated circuits; Quantum well intermixing

Indexed keywords

ANNEALING; INTEGRATED CIRCUITS; INTEGRATED OPTOELECTRONICS; ION BOMBARDMENT; ION IMPLANTATION; IONS; LASER APPLICATIONS; LASERS; MICROSTRUCTURE; OPTICAL PROPERTIES; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES;

COMPARATIVE STUDIES; GAINASP/INP; LASER ANNEALING; LASER-INDUCED DISORDERING; LOW COSTS; ND : YAG LASERS; PHOTONIC; PHOTONIC INTEGRATED CIRCUITS; QUANTUM WELL INTERMIXING; QUANTUM WELLS;

NEODYMIUM LASERS;

EID: 0000789723     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.273717     Document Type: Conference Paper

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