Broad spectrum InGaAsP edge-emitting light-emitting diode using selective-area metal-organic vapor-phase epitaxy

IEEE Photonics Technology Letters

Volumn 10, Issue 9, 1998, Pages 1223-1225

  Kashima, Yasumasa ^a   Munakata, Tsutomu ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

Emission spectrum; InGaAsP; Light emitting diode (LED); Multiple quantum well; Selective area growth

Indexed keywords

EMISSION SPECTROSCOPY; LIGHT EMISSION; MASKS; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

EDGE-EMITTING LIGHT EMITTING DIODES (ELED); SELECTIVE AREA GROWTH;

LIGHT EMITTING DIODES;

EID: 0032164267     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.705597     Document Type: Article

References (7)

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