The fabrication of a broad-spectrum light-emitting diode using high-energy ion implantation

IEEE Photonics Technology Letters

Volumn 8, Issue 9, 1996, Pages 1145-1147

  Poole, P J ^a   Davies, M ^a   Dion, M ^a   Feng, Y ^a   Charbonneau, S ^a   Goldberg, R D ^b   Mitchell, I V ^b  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b UNIVERSITY OF WESTERN ONTARIO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; ENERGY GAP; FABRICATION; ION IMPLANTATION; LIGHT EMISSION; MASKS; OPTICAL RESOLVING POWER; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SILICA; SPURIOUS SIGNAL NOISE;

BANDGAP; FABRY-PEROT NOISE; FULL WIDTH HALF MAXIMUM; SUPERLUMINESCENT DIODES; WAVELENGTH;

LIGHT EMITTING DIODES;

EID: 0030243893     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.531817     Document Type: Article

References (11)

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