Broad spectral bandwidth semiconductor lasers

Electronics Letters

Volumn 33, Issue 13, 1997, Pages 1142-1143

  Krauss, T F ^a   Hondromitros, G ^a   Vogele B ^a   De La Rue, R M ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Gallium arsenide; Semiconductor lasers

Indexed keywords

BANDWIDTH; DIFFRACTION GRATINGS; ELECTRIC CURRENTS; LASER MODE LOCKING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; TUNING;

THRESHOLD CURRENTS;

QUANTUM WELL LASERS;

EID: 0031164545     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970777     Document Type: Article

References (4)

1. IKEDA, S., SHIMIZU, A., SEKIGUCHI, Y., HASEGAWA, M., KANEKO, K., and HARA, T.: 'Wide-range wavelength tuning of an asymmetric dual quantum well laser with inhomogeneous current injection', Appl. Phys. Lett., 1989, 55, pp. 2057-2059
2. GINGRICH, H.S., CHUMNEY, D.R., SUN, S.-Z., HERSEE, S.D., LESTER, L.F., and BRUECK, S.R.J.: 'Broadly tunable external cavity laser diodes with staggered thickness multiple quantum wells', IEEE Photonics Technol. Lett., 1997, 9, pp. 155-157
3. MEHUYS, D., MITTELSTEIN, M., and YARIV, A.: 'Optimised Fabry-Perot (AlGa)As quantum-well lasers tunable over 105nm', Electron. Lett., 1989, 25, pp. 143-145
4. MCILROY, P., KUROBE, A., and UEMATSU, Y.: 'Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers', IEEE J. Quantum Electron., 1985, QE-21, pp. 1958-1963