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Volumn 1, Issue 2, 1999, Pages 324-329

Comparison of techniques for bonding VCSELS directly to ICs

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CMOS INTEGRATED CIRCUITS; FLIP CHIP DEVICES; MESFET DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SUBSTRATES;

EID: 0033331324     PISSN: 14644258     EISSN: None     Source Type: Journal    
DOI: 10.1088/1464-4258/1/2/343     Document Type: Article
Times cited : (18)

References (17)
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    • VCSEL's bonded directly to foundry fabricated GaAs smart pixel arrays
    • Rui Pu et al 1997 VCSEL's bonded directly to foundry fabricated GaAs smart pixel arrays IEEE Photonics Technol. Lett. 9 1622-4
    • (1997) IEEE Photonics Technol. Lett. , vol.9 , pp. 1622-1624
    • Pu, R.1
  • 2
    • 0032735792 scopus 로고    scopus 로고
    • Vertical cavity surface-emitting lasers flip-chip bonded to gigabit-per second CMOS circuits
    • Kishnamoorthy A V et al 1999 Vertical cavity surface-emitting lasers flip-chip bonded to gigabit-per second CMOS circuits IEEE Photonics Technol. Lett. 11 128-30
    • (1999) IEEE Photonics Technol. Lett. , vol.11 , pp. 128-130
    • Kishnamoorthy, A.V.1
  • 4
    • 0029290641 scopus 로고
    • GaAs MOW modulators integrated with silicon CMOS
    • Goossen K W et al 1995 GaAs MOW modulators integrated with silicon CMOS IEEE Photonics Technol. Lett. 7 360-2
    • (1995) IEEE Photonics Technol. Lett. , vol.7 , pp. 360-362
    • Goossen, K.W.1
  • 7
    • 0031191924 scopus 로고    scopus 로고
    • A vertical-cavity surface-emitting laser appliquéd to a 0.8 μm NMOS driver
    • Mathine D L, Droopad R and Maracas G N 1997 A vertical-cavity surface-emitting laser appliquéd to a 0.8 μm NMOS driver IEEE. Photonics Technol. Lett. 9 869-71
    • (1997) IEEE. Photonics Technol. Lett. , vol.9 , pp. 869-871
    • Mathine, D.L.1    Droopad, R.2    Maracas, G.N.3
  • 8
    • 0028388250 scopus 로고
    • Integration of GaAs vertical-cavity surface-emitting laser on Si by substrate removal
    • Yeh H-J J and Smith J S 1994 Integration of GaAs vertical-cavity surface-emitting laser on Si by substrate removal Appl. Phys. Lett. 64 1466-8
    • (1994) Appl. Phys. Lett. , vol.64 , pp. 1466-1468
    • Yeh, H.-J.J.1    Smith, J.S.2
  • 9
  • 10
    • 0030114091 scopus 로고    scopus 로고
    • Scaling optoelectronic-VLSI circuits into the 21st century: A technology roadmap
    • Kishnamoorthy A V and Miller D A B 1996 Scaling optoelectronic-VLSI circuits into the 21st century: a technology roadmap IEEE J. Sel. Top. Quantum Electron. 2 55-76
    • (1996) IEEE J. Sel. Top. Quantum Electron. , vol.2 , pp. 55-76
    • Kishnamoorthy, A.V.1    Miller, D.A.B.2
  • 13
    • 0343163674 scopus 로고    scopus 로고
    • In process stress analysis of flip chip assemblies during underfill cure and environmental stress testing
    • Baldwin D 1998 In process stress analysis of flip chip assemblies during underfill cure and environmental stress testing Seminar (University of Colorado, September 1998)
    • (1998) Seminar (University of Colorado, September 1998)
    • Baldwin, D.1
  • 15
    • 0342293996 scopus 로고    scopus 로고
    • Unpublished data
    • Unpublished data
  • 16
    • 0029632464 scopus 로고
    • Selectively oxidized vertical cavity surface emitting lasers with 50% power conversion efficiency
    • Lear K L, Choquette K D, Schneider R P Jr, Kilcoyne S P and Geib K M 1995 Selectively oxidized vertical cavity surface emitting lasers with 50% power conversion efficiency Electron. Lett. 31 208-9
    • (1995) Electron. Lett. , vol.31 , pp. 208-209
    • Lear, K.L.1    Choquette, K.D.2    Schneider R.P., Jr.3    Kilcoyne, S.P.4    Geib, K.M.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.