A vertical-cavity surface-emitting laser appliquéed to a 0.8-μm NMOS driver

IEEE Photonics Technology Letters

Volumn 9, Issue 7, 1997, Pages 869-871

  Mathine, D L ^a,b,c   Droopad, R ^b,d   Maracas, G N ^a,b,d  

^a IEEE   (United States)

^b Arizona State University   (United States)

^c UNIVERSITY OF ARIZONA   (United States)

^d MOTOROLA INC   (United States)

Author keywords

CMOS integrated circuits; Hybrid integrated circuit fabrication; Integrated circuit fabrication; Intergrated optoelectronics; Optical interconnections; Semiconductor device fabrication; Surface emitting lasers

Indexed keywords

CMOS INTEGRATED CIRCUITS; HYBRID INTEGRATED CIRCUITS; INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED CIRCUIT TESTING; OPTICAL INTERCONNECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR LASERS; SUBSTRATES;

DRIVER CIRCUITS; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

INTEGRATED OPTOELECTRONICS;

EID: 0031191924     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.593327     Document Type: Article

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