Epitaxial growth of rutile films on Si(100) substrates by thermal oxidation of evaporated titanium films in argon flux

Journal of Physics Condensed Matter

Volumn 11, Issue 43, 1999, Pages 8511-8516

  Dai, Z ^a,c   Naramoto, H ^a   Narumi, K ^a   Yamaoto, S ^b  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b Japan Atomic Energy Research Institute   (Japan)

^c MICHIGAN STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CRYSTAL ORIENTATION; ELECTRON BEAMS; EPITAXIAL GROWTH; EVAPORATION; FILM GROWTH; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON WAFERS; STOICHIOMETRY; THERMOOXIDATION; THICK FILMS; X RAY CRYSTALLOGRAPHY;

ELECTRON BEAM EVAPORATION; RUTILE;

TITANIUM OXIDES;

EID: 0033327722     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/11/43/314     Document Type: Article

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