Atomic and electronic structures of oxygen-adsorbed Si(001) surfaces

Surface Science

Volumn 357-358, Issue , 1996, Pages 509-513

  Uchiyama, Toshihiro ^a   Tsukada, Masaru ^b  

^a Matsushita Research Institute Tokyo Inc   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Density functional calculations; Low index single crystal surfaces; Molecular dynamics; Oxidation; Silicon; Surface relaxation and reconstruction

Indexed keywords

APPROXIMATION THEORY; CALCULATIONS; CRYSTAL ATOMIC STRUCTURE; ELECTRONIC STRUCTURE; MOLECULAR DYNAMICS; OXIDATION; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON;

ATOMIC OXYGEN ADSORPTION; BACK BOND; DENSITY FUNCTIONAL CALCULATIONS; DIMER; ELECTRONEGATIVITY; IONICITY; LOW INDEX SINGLE CRYSTAL SURFACES; SURFACE RECONSTRUCTION;

SURFACES;

EID: 0030165569     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)80076-8     Document Type: Article

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