Junction Degradation in Bipolar Transistors and the Reliability Imposed Constraints to Scaling and Design

IEEE Transactions on Electron Devices

Volumn 35, Issue 12, 1988, Pages 2101-2107

  Duan Lee Tang, Denny ^a   Hackbarth, Edward ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FAULT CURRENTS--LEAKAGE CURRENTS; LOGIC DESIGN;

JUNCTION DEGRADATION; NARROW-EMITTER TRANSISTORS; NOISE MARGIN; SCALING;

TRANSISTORS, BIPOLAR;

EID: 0024122728     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.8783     Document Type: Article

References (13)

1. P. M. Solomon and D. D. Tang, “Bipolar circuit scaling,” in Dig. Tech. Papers ISSCC, pp. 86–89, 1979.
2. J. M. C. Stork and R. D. Isaac, “Tunneling in base-emitter junctions,” IEEE Trans. Electron Devices, vol. ED-30, no. 11, pp. 1527–1534, 1983.
3. A. Logan and A. G. Chynoweth, “Effect of degenerate semiconductor band structure on current-voltage characteristics of silicon tunnel diodes,” Phys. Rev., vol. 131, no. 1, pp. 89–95, 1963.
4. J. Del Alamo and R. Swanson, “Foward-bias tunneling current: A limitation to bipolar scaling,” IEEE Electron Device Lett., vol. EDL-7, no. 11, pp. 629–631, 1986.
5. 2 at high injection densities,” Solid-State Electron., vol. 17, pp. 963–971, 1974.
6. fe,” IEEE Trans. Electron Devices, vol. ED-17, no. 10, pp. 871–878, 1970.
7. G. P. Li and S. Petersen, “Hot carrier effects in advanced self-aligned bipolar transistors,” in IEDM Tech. Dig., pp. 22–24, 1985.
8. S. P. Joshi, R. Lahri, and C. Lage, “Poly emitter bipolar hot carrier effects in an advanced BICMOS technology,” in IEDM Tech. Dig., pp. 182–185, 1987.
9. T. C. Chen, C. Kaya, M. B. Ketchen, and T. H. Ning, “Reliability analysis of self-aligned bipolar transistor under forward active current stress,” in IEDM Tech. Dig., pp. 650–653, 1986.
10. R. Watchnik, T. Bucelot, and G. P. Li, “Degradation of bipolar transistor after high current stress,” J. Appl. Phys., to be published.
11. T. H. Ning et al., “Self-aligned bipolar transistors for high performance and low-power delay VLSI,” IEEE Trans. Electron Devices, vol. ED-28, pp. 1010–1013, 1981.
12. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981, p. 92.
13. J. F. Verwey, A. Heranga, R. de Werdt, and W. V. D. Hofstad, “Drift of the breakdown voltage in p-n jnctions in silicon (walk-out),” Solid-State State Electron., vol. 20, pp. 689–695, 1977.