On the aging of avalanche light emission from silicon junctions

IEEE Transactions on Electron Devices

Volumn 46, Issue 6, 1999, Pages 1234-1239

  de la Bardonnie, M ^a   Jiang, Dong ^a   Kerns, Sherra E ^a   Kerns Jr , David V ^a   Mialhe, Pierre ^a   Charles, Jean Pierre ^a   Hoffman, Alain ^a  

^a VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; FOURIER TRANSFORMS; INTERFEROMETERS; LIGHT EMISSION; PHOTONS; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

AVALANCHE BREAKDOWN; SILICON JUNCTIONS;

AVALANCHE DIODES;

EID: 0032625685     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.766891     Document Type: Article

References (15)