Formation of self-assembled Si1-xGex islands using reduced pressure chemical vapor deposition and subsequent thermal annealing of thin germanium-rich films

Applied Surface Science

Volumn 152, Issue 1, 1999, Pages 99-106

  Bashir, Rashid ^a   Kabir, Abul E ^b   Chao, Kuo Jen ^c  

^a PURDUE UNIVERSITY   (United States)

^b NATIONAL SEMICONDUCTOR CORPORATION   (United States)

^c CHARLES EVANS AND ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; HYDROCHLORIC ACID; SEMICONDUCTING FILMS; SILANES; SILICON WAFERS; THIN FILMS;

SILICON GERMANIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033311632     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00306-2     Document Type: Article

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