-
1
-
-
84941460760
-
Semiconductor Contacts, An Approach to Ideas and Models
-
ch. 1
-
H. K. Henish, Semiconductor Contacts, An Approach to Ideas and Models. Oxford: Clarendon, 1984, ch. 1.
-
(1984)
Oxford: Clarendon
-
-
Henish, H.K.1
-
2
-
-
0020140815
-
Contact resistance and methods for its determination
-
S. S. Cohen, “Contact resistance and methods for its determination,” Thin Solid Films, vol. 104, pp. 361-379, 1983.
-
(1983)
Thin Solid Films
, vol.104
, pp. 361-379
-
-
Cohen, S.S.1
-
3
-
-
0022584476
-
Measurement and extraction of specific contact resistivity
-
June
-
K. C. Saraswat, W. M. Loh, T. A. Schreyer, and S. E. Swirhun, “Measurement and extraction of specific contact resistivity,” in Proc. 3rd Int. IEEE VLSI Multilevel Interconnection Conf. (Santa Clara, CA), pp. 385-391, June 1986.
-
(1986)
Proc. 3rd Int. IEEE VLSI Multilevel Interconnection Conf. (Santa Clara
, pp. 385-391
-
-
Saraswat, K.C.1
Loh, W.M.2
Schreyer, T.A.3
Swirhun, S.E.4
-
4
-
-
0023313359
-
Modeling and measurement of contact resistances
-
Mar.
-
W. M. Loh, S. E. Swirhun, T. A. Schreyer, R. M. Swanson, and K. C. Saraswat, “Modeling and measurement of contact resistances,” IEEE Trans. Electron Devices, vol. ED-34, no. 3, pp. 512-524, Mar. 1987.
-
(1987)
IEEE Trans. Electron Devices
, vol.ED-34
, Issue.3
, pp. 512-524
-
-
Loh, W.M.1
Swirhun, S.E.2
Schreyer, T.A.3
Swanson, R.M.4
Saraswat, K.C.5
-
5
-
-
0020201777
-
A direct measurement of interfacial contact resistance
-
Oct.
-
S. J. Proctor and L. W. Linholm, “A direct measurement of interfacial contact resistance,” IEEE Electron Device Lett., vol. EDL-3, no. 10, pp. 294-296, Oct. 1982.
-
(1982)
IEEE Electron Device Lett.
, vol.EDL-3
, Issue.10
, pp. 294-296
-
-
Proctor, S.J.1
Linholm, L.W.2
-
6
-
-
0001501824
-
Ohmic contacts for GaAs devices
-
R. H. Cox and H. Strack, “Ohmic contacts for GaAs devices,” Solid-State Electron., vol. 10, pp. 1213-1218, 1967.
-
(1967)
Solid-State Electron.
, vol.10
, pp. 1213-1218
-
-
Cox, R.H.1
Strack, H.2
-
7
-
-
34548278636
-
Physics of Semiconductor Devices
-
2nd ed
-
S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981, p. 304.
-
(1981)
New York: Wiley
, pp. 304
-
-
Sze, S.M.1
-
8
-
-
0021424978
-
Solar cell contact resistance—A review
-
May
-
D. K. Schroder and D. L. Meier, “Solar cell contact resistance—A review,” IEEE Trans. Electron Devices, vol. ED-31, no. 5, pp. 637-647, May 1984.
-
(1984)
IEEE Trans. Electron Devices
, vol.ED-31
, Issue.5
, pp. 637-647
-
-
Schroder, D.K.1
Meier, D.L.2
-
9
-
-
0020090520
-
Metal semiconductor contacts
-
E. H. Rhoderick, “Metal semiconductor contacts,” IEE Proc., vol. 129, no. 1, pp. 1-14, 1982.
-
(1982)
IEE Proc.
, vol.129
, Issue.1
, pp. 1-14
-
-
Rhoderick, E.H.1
-
10
-
-
0015328798
-
Contact resistance and contact resistivity
-
Apr.
-
H. H. Berger, “Contact resistance and contact resistivity,” J. Electrochem. Soc., vol. 119, no. 4, pp. 507-514, Apr. 1972.
-
(1972)
J. Electrochem. Soc.
, vol.119
, Issue.4
, pp. 507-514
-
-
Berger, H.H.1
-
11
-
-
0020129227
-
Obtaining the specific contact resistance from transmission line model measurements
-
May
-
G. K. Reeves and H. B. Harrison, “Obtaining the specific contact resistance from transmission line model measurements,” IEEE Electron Device Lett., vol. EDL-3, no. 5, pp. 111-113, May 1982.
-
(1982)
IEEE Electron Device Lett.
, vol.EDL-3
, Issue.5
, pp. 111-113
-
-
Reeves, G.K.1
Harrison, H.B.2
-
12
-
-
0020844494
-
Direct measurements of interfacial contact resistance, end contact resistance, and interfacial contact layer uniformity
-
Nov.
-
S. J. Proctor, L. W. Linholm, and J. A. Mazer, “Direct measurements of interfacial contact resistance, end contact resistance, and interfacial contact layer uniformity,” IEEE Trans. Electron Devices, vol. ED-30, no. 11, pp. 1535-1542, Nov. 1983.
-
(1983)
IEEE Trans. Electron Devices
, vol.ED-30
, Issue.11
, pp. 1535-1542
-
-
Proctor, S.J.1
Linholm, L.W.2
Mazer, J.A.3
-
13
-
-
0021422094
-
Determining specific contact resistivity from contact end resistance measurements
-
May
-
J. Chem and W. G. Oldham, “Determining specific contact resistivity from contact end resistance measurements,” IEEE Electron Device Lett., vol. EDL-5, pp. 178-180, May 1984.
-
(1984)
IEEE Electron Device Lett.
, vol.EDL-5
, pp. 178-180
-
-
Chem, J.1
Oldham, W.G.2
-
14
-
-
0022897701
-
Extraction of minimum specific contact resistivity using Kelvin resistors
-
Dec.
-
R. L. Gillenwater, M. J. Hafich, and G. Y. Robinson, “Extraction of minimum specific contact resistivity using Kelvin resistors,” IEEE Electron Device Lett., vol. EDL-12, pp. 674-676, Dec. 1986.
-
(1986)
IEEE Electron Device Lett.
, vol.EDL-12
, pp. 674-676
-
-
Gillenwater, R.L.1
Hafich, M.J.2
Robinson, G.Y.3
-
15
-
-
0022820429
-
Accuracy of the four-terminal measurement techniques for determining contact resistance
-
Nov.
-
A. A. Naem and D. A. Smith, “Accuracy of the four-terminal measurement techniques for determining contact resistance,” J. Electrochem. Soc., vol. 133, no. 11, pp. 2377-2380, Nov. 1986.
-
(1986)
J. Electrochem. Soc.
, vol.133
, Issue.11
, pp. 2377-2380
-
-
Naem, A.A.1
Smith, D.A.2
-
16
-
-
0022010667
-
An improved test structure and Kelvin measurement method for the determination of integrated circuit front contact resistance
-
J. A. Mazer, L. W. Linholm, and A. N. Saxena, “An improved test structure and Kelvin measurement method for the determination of integrated circuit front contact resistance,” J. Electrochem. Soc., vol. 132, no. 2, pp. 440-443, 1985.
-
(1985)
J. Electrochem. Soc.
, vol.132
, Issue.2
, pp. 440-443
-
-
Mazer, J.A.1
Linholm, L.W.2
Saxena, A.N.3
-
17
-
-
0023314709
-
Current crowding and misalignment effects as sources of error in contact resistivity measurements—Part I: Computer simulation of conventional CER and CKR structures
-
Mar.
-
A. Scorzoni, M. Finetti, K. Grahn, I. Suni, and P. Cappelletti, “Current crowding and misalignment effects as sources of error in contact resistivity measurements—Part I: Computer simulation of conventional CER and CKR structures,” IEEE Trans. Electron Devices, vol. ED-34, no. 3, pp. 525-532, Mar. 1987.
-
(1987)
IEEE Trans. Electron Devices
, vol.ED-34
, Issue.3
, pp. 525-532
-
-
Scorzoni, A.1
Finetti, M.2
Grahn, K.3
Suni, I.4
Cappelletti, P.5
-
18
-
-
0022103636
-
Contact resistivity of silicon/silicide structures formed by thin film reactions
-
M. Finetti, S. Guerri, P. Negrini, A. Scorzoni, and I. Suni, “Contact resistivity of silicon/silicide structures formed by thin film reactions,” Thin Solid Films, vol. 130, 37-45, 1985.
-
(1985)
Thin Solid Films
, vol.130
-
-
Finetti, M.1
Guerri, S.2
Negrini, P.3
Scorzoni, A.4
Suni, I.5
-
19
-
-
0022769009
-
The sidewall resistor—A novel test structure to reliably extract specific contact resistivity
-
W. M. Loh, P. J. Wright, T. A. Schreyer, S. E. Swirhun, K. C. Saraswat, and J. D. Meindl, “The sidewall resistor—A novel test structure to reliably extract specific contact resistivity,” IEEE Electron Device Lett., vol. EDL-7, no. 8, pp. 477-479, 1986.
-
(1986)
IEEE Electron Device Lett.
, vol.EDL-7
, Issue.8
, pp. 477-479
-
-
Loh, W.M.1
Wright, P.J.2
Schreyer, T.A.3
Swirhun, S.E.4
Saraswat, K.C.5
Meindl, J.D.6
-
20
-
-
0022691158
-
Determination of contact parameters of interconnecting layers in VLSI circuits
-
Mar.
-
G. Reeves and H. B. Harrison, “Determination of contact parameters of interconnecting layers in VLSI circuits,” IEEE Trans. Electron Devices, vol. ED-33, no. 3, pp. 328-334, Mar. 1986.
-
(1986)
IEEE Trans. Electron Devices
, vol.ED-33
, Issue.3
, pp. 328-334
-
-
Reeves, G.1
Harrison, H.B.2
-
21
-
-
0001672081
-
Models for contacts to planar devices
-
H. H. Berger, “Models for contacts to planar devices,” Solid-State Electron., vol. 15, pp. 145-158, 1972.
-
(1972)
Solid-State Electron.
, vol.15
, pp. 145-158
-
-
Berger, H.H.1
-
22
-
-
0023451622
-
Well- defined contacts produce accurate spreading resistance measurements
-
G. P. Carver, S. S. Kang, J. R. Ehrstein, and D. B. Novotny, “Well- defined contacts produce accurate spreading resistance measurements,” J. Electrochem. Soc., vol. 134, no. 11, pp. 2878-2882, 1987.
-
(1987)
J. Electrochem. Soc.
, vol.134
, Issue.11
, pp. 2878-2882
-
-
Carver, G.P.1
Kang, S.S.2
Ehrstein, J.R.3
Novotny, D.B.4
-
23
-
-
0023163759
-
Some aspects of spreading resistance profile analysis
-
J. Albers, “Some aspects of spreading resistance profile analysis,” in Emerging Semiconductor Technology, ASTM STP 960, D. C. Gupta and P. H. Langer, Eds., Amer. Soc. for Testing and Materials, 1986, pp. 480-501.
-
(1986)
Emerging Semiconductor Technology
, pp. 480-501
-
-
Albers, J.1
-
24
-
-
0004151449
-
Electric Contacts; Theory and Application
-
R. Holm, Electric Contacts; Theory and Application. New York: Springer-Verlag, 1967, p. 16.
-
(1967)
New York: Springer-Verlag
, pp. 16
-
-
Holm, R.1
-
26
-
-
0022145685
-
An alternative approach to the calculation of four-probe resistances on nonuniform structures
-
J. Albers and H. L. Berkowitz, “An alternative approach to the calculation of four-probe resistances on nonuniform structures,” J. Electrochem. Soc., vol. 132, no. 10, pp. 2453-2456, 1985.
-
(1985)
J. Electrochem. Soc.
, vol.132
, Issue.10
, pp. 2453-2456
-
-
Albers, J.1
Berkowitz, H.L.2
-
27
-
-
0014445811
-
Application of multilayer potential distribution to spreading resistance correction factors
-
P. A. Schumann and E. E. Gardner, “Application of multilayer potential distribution to spreading resistance correction factors,” J. Electrochem. Soc., vol. 116, pp. 87-91, 1969.
-
(1969)
J. Electrochem. Soc.
, vol.116
, pp. 87-91
-
-
Schumann, P.A.1
Gardner, E.E.2
-
28
-
-
0041442144
-
Spreading resistance correction factors
-
E. E. Gardner and P. A. Schumann, “Spreading resistance correction factors,” Solid-State Electron., vol. 12, pp. 371-375, 1969.
-
(1969)
Solid-State Electron.
, vol.12
, pp. 371-375
-
-
Gardner, E.E.1
Schumann, P.A.2
-
29
-
-
0022013135
-
Fixed pattern noise in the solid-state imagers due to the striations in Czochralski silicon crystals
-
K. Senda, Y. Hiroshima, S. Matsumoto, T. Kuriyama, M. Susa, S. Terakawa, and T. Kunii, “Fixed pattern noise in the solid-state imagers due to the striations in Czochralski silicon crystals,” J. Appl. Phys., vol. 57, pp. 1369-1372, 1985.
-
(1985)
J. Appl. Phys.
, vol.57
, pp. 1369-1372
-
-
Senda, K.1
Hiroshima, Y.2
Matsumoto, S.3
Kuriyama, T.4
Susa, M.5
Terakawa, S.6
Kunii, T.7
-
30
-
-
0019071879
-
Resis tivity-dopant density relationship for boron-doped silicon
-
W. R. Thurber, R. L. Mattis, Y. M. Liu, and J. J. Filliben, “Resis tivity-dopant density relationship for boron-doped silicon,” J. Electrochem. Soc., vol. 127, pp. 2291-2294, 1980.
-
(1980)
J. Electrochem. Soc.
, vol.127
, pp. 2291-2294
-
-
Thurber, W.R.1
Mattis, R.L.2
Liu, Y.M.3
Filliben, J.J.4
-
31
-
-
0014735482
-
Electron tunneling and contact resistance of metal-silicon contact barriers
-
A. Y. C. Yu, “Electron tunneling and contact resistance of metal-silicon contact barriers,” Solid-State Electron., vol. 13, pp. 239-247, 1970.
-
(1970)
Solid-State Electron.
, vol.13
, pp. 239-247
-
-
Yu, A.Y.C.1
-
32
-
-
0001672081
-
Models for contacts to planar devices
-
H. H. Berger, “Models for contacts to planar devices,” Solid-State Electron., vol. 15, pp. 145-158, 1972.
-
(1972)
Solid-State Electron.
, vol.15
, pp. 145-158
-
-
Berger, H.H.1
-
33
-
-
0022025575
-
On the optimization of VLSI contacts
-
Mar.
-
R. L. Maddox, “On the optimization of VLSI contacts,” IEEE Trans. Electron Devices, vol. ED-32, pp. 682-690, Mar. 1985.
-
(1985)
IEEE Trans. Electron Devices
, vol.ED-32
, pp. 682-690
-
-
Maddox, R.L.1
-
34
-
-
84941453796
-
in VLSI Handbook
-
N. G. Einspruch, Ed
-
W. H. Class and J. F. Smith, in VLSI Handbook, N. G. Einspruch, Ed. Orlando, FL: Academic, 1985, p. 435.
-
(1985)
Orlando, FL: Academic
, pp. 435
-
-
Class, W.H.1
Smith, J.F.2
-
35
-
-
0022061669
-
Optimal interconnection circuits for VLSI
-
May
-
H. B. Bakoglu and J. D. Meindl, “Optimal interconnection circuits for VLSI,” IEEE Trans. Electron Devices, vol. ED-32, pp. 903-909, May 1985.
-
(1985)
IEEE Trans. Electron Devices
, vol.ED-32
, pp. 903-909
-
-
Bakoglu, H.B.1
Meindl, J.D.2
-
36
-
-
0022893930
-
Trends in advanced process technology—Submicrometer CMOS device design and process requirements
-
Dec.
-
D. M. Brown, M. Ghezzo, and J. M. Pimbley, “Trends in advanced process technology—Submicrometer CMOS device design and process requirements,” Proc. IEEE, vol. 74, pp. 1678-1702, Dec. 1986.
-
(1986)
Proc. IEEE
, vol.74
, pp. 1678-1702
-
-
Brown, D.M.1
Ghezzo, M.2
Pimbley, J.M.3
|