Characterization of extended defects in highly Te-doped 〈111〉 GaSb single crystals grown by the Czochralski technique

Journal of Crystal Growth

Volumn 121, Issue 4, 1992, Pages 781-789

  Doerschel, J ^a   Geissler, U ^a  

^a LEIBNIZ INSTITUT IM FORSCHUNGSVERBUND BERLIN E V   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; TELLURIUM;

CZOCHRALSKI CRYSTAL GROWTH; SINGLE CRYSTALS;

CRYSTAL DEFECTS;

EID: 0026908749     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(92)90586-8     Document Type: Article

References (25)

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7. Investigation of the nature of point defects in in Te-doped gallium antimonide
8. GaAs and Related Compounds 1978