Extremely low specific contact resistivities for p-type GaSb, grown by molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 13, Issue 1, 1995, Pages 1-3

  Tadayon, Bijan ^a   Kyono, Carl S ^a   Fatemi, Mohammad ^a   Tadayon, Saied ^a   Mittereder, Jeffrey A ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRIC CONTACTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SUBSTRATES; THERMAL EFFECTS;

GALLIUM ANTIMONIDE; HOLE CONCENTRATION; METAL CONTACTS; PLANAR DOPING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029207897     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.587979     Document Type: Article

References (19)