Tantalum metallization using an electron-cyclotron-resonance plasma source coupled with divided microwaves

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 3, 1997, Pages 707-711

  Nishimura, H ^a   Ono, T ^a   Oda, M ^a   Matsuo, S ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000085675     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580806     Document Type: Article

References (15)

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